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Title: Realization of low resistive p-ZnO thin film by Al-As codoping

Realization of low resistive p-ZnO thin film by Al-As codoping Al-As codoping into ZnO has been proposed to realize low resistive and stable p-ZnO thin film by RF magnetron sputtering. Al-As codoping has been achieved by As back diffusion from GaAs substrate and sputtering Al doped ZnO target. Hall measurements showed that the hole concentration increases with the increase of Al concentration from 10{sup 15} to 10{sup 20} cm{sup -3}. Among the grown films, 1 at% Al doped ZnO: As showed low resistivity (3.5x10{sup -2}{Omega}cm) with high hole concentration. X-ray diffraction shows that all the films are crystallized in wurtzite structure with (002) preferential orientation. The diffusion of As atoms from the substrate and the presence of dopants in the film have been confirmed by Rutherford ford back scattering and energy dispersive spectroscopy analysis, respectively.
Authors: ; ;
Publication Date:
OSTI Identifier:OSTI ID: 22004150
Resource Type:Journal Article
Resource Relation:Journal Name: AIP Conference Proceedings; Journal Volume: 1447; Journal Issue: 1; Conference: 56. DAE solid state physics symposium 2011, Kattankulathur, Tamilnadu (India), 19-23 Dec 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:United States
Language:English
Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ALUMINIUM; ARSENIC; CRYSTAL GROWTH; CUBIC LATTICES; DEPOSITION; DIFFUSION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM ARSENIDES; HALL EFFECT; HOLES; ORIENTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES