Preparation and thermoelectric properties of ternary superionic conductor CuCrS{sub 2}

Journal Article · Wed Feb 15 00:00:00 EST 2012 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2011.11.040· OSTI ID:21612899

Yuexing, Chen ^[1]; Zhenhua, Ge; Pengpeng, Shang ^[1]

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1. School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Haidian Zone, Beijing 100083 (China)

Transition metal chalcogenide CuCrS{sub 2} powder was synthesized by mechanical alloying (MA) and then consolidated by spark plasma sintering (SPS) technique at 673-1073 K. The phase structure, microstructure and thermoelectric properties of samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Seebeck coefficient/electrical conductivity measuring system, respectively. All the bulks indicated a single phase CuCrS{sub 2}, while the high relative density over 90% were attained for the samples sintered at 873-1073 K. The electrical conductivity of bulk samples displayed a typical characteristic of semiconductor. With increasing measuring temperature, the conductive behaviour of bulk samples sintered over 973 K showed a semiconductor transformation from n-type to p-type due to the changes of main carrier type. The sample obtained by applying SPS at 873 K got the highest power factor 83.2 {mu}W m{sup -1} K{sup -2}, and the largest ZT value 0.11 at 673 K. - Graphical abstract: The samples sintered above 873 K, both of the Seebeck coefficient and electrical conductivity exhibit an increase tendency with increasing temperature, which is due to the mechanism of mix-conduction for CuCrS{sub 2}. Highlights: Black-Right-Pointing-Pointer Single phase CuCrS{sub 2} powder was synthesized by ball-milling at 425 rpm for 40 h. Black-Right-Pointing-Pointer Dense CuCrS{sub 2} bulks were fabricated using SPS techniques at sintering temperature 873-1073 K. Black-Right-Pointing-Pointer Seebeck coefficient of CuCrS{sub 2} samples sintered over 973 K change the signs. Black-Right-Pointing-Pointer Highest power factor reached 83.2 {mu}W m{sup -1} K{sup -2} at 673 K for the sample sintered at 873 K. Black-Right-Pointing-Pointer ZT value was 0.11 at 673 K for the sample sintered at 873 K.

• OSTI ID: 21612899
• Journal Information: Journal of Solid State Chemistry, Vol. 186; Other Information: DOI: 10.1016/j.jssc.2011.11.040; PII: S0022-4596(11)00646-3; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
FIELD EMISSION
IONIC CONDUCTIVITY
MICROSTRUCTURE
POWDERS
POWER FACTOR
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SINTERING
THERMOELECTRIC MATERIALS
THERMOELECTRIC PROPERTIES
TRANSITION ELEMENTS
X-RAY DIFFRACTION
COHERENT SCATTERING
DIFFRACTION
DIMENSIONLESS NUMBERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELEMENTS
EMISSION
FABRICATION
MATERIALS
METALS
MICROSCOPY
PHYSICAL PROPERTIES
SCATTERING