Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666565· OSTI ID:21612431

Ganz, P R; Schaadt, D M ^[1]

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1. DFG-Center for Functional Nanostructures (CFN) and Institut fuer Angewandte Physik, Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Strasse 1a, 76131 Karlsruhe (Germany)

Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

• OSTI ID: 21612431
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666565; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ALLOYS
ALUMINIUM NITRIDES
CONCENTRATION RATIO
CRYSTAL GROWTH
DIAMAGNETISM
DOPED MATERIALS
FERROMAGNETIC MATERIALS
GALLIUM NITRIDES
MAGNETIZATION
MOLECULAR BEAM EPITAXY
PLASMA
SAPPHIRE
SQUID DEVICES
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
ALLOYS
ALUMINIUM COMPOUNDS
CORUNDUM
CRYSTAL GROWTH METHODS
DIMENSIONLESS NUMBERS
ELECTRONIC EQUIPMENT
EPITAXY
EQUIPMENT
FLUXMETERS
GALLIUM COMPOUNDS
MAGNETIC MATERIALS
MAGNETISM
MATERIALS
MEASURING INSTRUMENTS
MICROWAVE EQUIPMENT
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
PNICTIDES
SUPERCONDUCTING DEVICES
TEMPERATURE RANGE