Symmetry Elevation and Symmetry Breaking: Keys to Describe and Explain Excitonic Complexes in Semiconductor Quantum Dots

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666518· OSTI ID:21612422

Karlsson, K F ^[1]; Dupertuis, M A; Oberli, D Y; Pelucchi, E; Rudra, A; Kapon, E ^[1]; Holtz, P O ^[2]

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1. Ecole Polytechnique Federale de Lausanne (EPFL), Laboratory of Physics of Nanostructures, CH-1015 Lausanne (Switzerland)
2. Linkoeping University, Department of Physics, Chemistry, and Biology (IFM), Semiconductor Materials, S-58183 Linkoeping (Sweden)

The results of a group theoretical analysis of the excitonic fine structure are presented and compared with spectroscopic data on single quantum dots. The spectral features reveal the signatures of a symmetry higher than the crystal symmetry (C{sub 3v}). A consistent picture of the fine structure patterns for various exciton complexes is obtained with group theory and the concepts of symmetry elevation and symmetry breaking.

• OSTI ID: 21612422
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666518; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
CHEMICAL VAPOR DEPOSITION
COMPLEXES
CRYSTALS
EXCITONS
FINE STRUCTURE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SYMMETRY
SYMMETRY BREAKING
CHEMICAL COATING
DEPOSITION
MATERIALS
NANOSTRUCTURES
QUASI PARTICLES
SURFACE COATING