High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666291· OSTI ID:21612375

Sanorpim, S ^[1]; Kuntharin, S ^[1]; Parinyataramas, J ^[2]; Yaguchi, H; Iwahashi, Y; Orihara, M; Hijikata, Y; Yoshida, S ^[3]

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1. Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand)
2. Nanoscience and Technology, Graduate school, Chulalongkorn University, Bangkok 10330 (Thailand)
3. Graduate School of Science and Engineering, Saitama University, Saitama-shi 338-8570 (Japan)

High cubic-phase purity InN films were grown on MgO (001) substrates by molecular beam epitaxy with a cubic-phase GaN buffer layer. The cubic phase purity of the InN grown layers has been analyzed by high resolution X-ray diffraction, {mu}-Raman scattering and transmission electron microscopy. It is evidenced that the hexagonal-phase content in the InN overlayer much depends on hexagonal-phase content in the cubic-phase GaN buffer layer and increases with increasing the hexagonal-phase GaN content. From Raman scattering measurements, in addition, the InN layer with lowest hexagonal component (6%), only Raman characteristics of cubic TO{sub InN} and LO{sub InN} modes were observed, indicating a formation of a small amount of stacking faults, which does not affect on vibrational property.

• OSTI ID: 21612375
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666291; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CUBIC LATTICES
FREQUENCY MEASUREMENT
GALLIUM NITRIDES
HEXAGONAL LATTICES
INDIUM NITRIDES
LAYERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
PHASE STABILITY
PHASE STUDIES
PHOTOLUMINESCENCE
RAMAN EFFECT
RAMAN SPECTROSCOPY
STACKING FAULTS
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ALKALINE EARTH METAL COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL GROWTH METHODS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON MICROSCOPY
EMISSION
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASER SPECTROSCOPY
LUMINESCENCE
MAGNESIUM COMPOUNDS
MICROSCOPY
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHOTON EMISSION
PNICTIDES
SCATTERING
SPECTROSCOPY
STABILITY