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Title: Atomic Layer Deposited Al{sub 2}O{sub 3} as Characterized Reference Samples for Nanolayer Metrology

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3657889· OSTI ID:21612174
;  [1];  [2]
  1. Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)
  2. Research Institute for Technical Physics and Materials Science, Konkoly Thege u. 29-33, 1121 Budapest (Hungary)

Plasma assisted Atomic Layer Deposition Al{sub 2}O{sub 3} samples were studied using an approach of complementary metrology using Ellipsometry, X-Ray Reflectivity, Atomic Force Microscopy, and Total Reflection X-Ray Fluorescence. For modeling the samples, an interfacial rough SiO{sub 2} layer has to be assumed. The excellent linearity of the ALD process was used to cross check Ellipsometry and X-Ray Reflectivity. In contrast to Ellipsometry, X-Ray Reflectivity showed a residual surface layer, identified as chlorine contaminated layer by TXRF. The samples are shown to be ideal candidates for calibration of X-ray fluorescence as the Al signal linearly depends on the film thickness or ALD cycles. Furthermore, the impact of self-absorption of thick layers for TXRF was shown by the samples.

OSTI ID:
21612174
Journal Information:
AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657889; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English