Atomic Layer Deposited Al{sub 2}O{sub 3} as Characterized Reference Samples for Nanolayer Metrology
- Fraunhofer Institute for Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen (Germany)
- Research Institute for Technical Physics and Materials Science, Konkoly Thege u. 29-33, 1121 Budapest (Hungary)
Plasma assisted Atomic Layer Deposition Al{sub 2}O{sub 3} samples were studied using an approach of complementary metrology using Ellipsometry, X-Ray Reflectivity, Atomic Force Microscopy, and Total Reflection X-Ray Fluorescence. For modeling the samples, an interfacial rough SiO{sub 2} layer has to be assumed. The excellent linearity of the ALD process was used to cross check Ellipsometry and X-Ray Reflectivity. In contrast to Ellipsometry, X-Ray Reflectivity showed a residual surface layer, identified as chlorine contaminated layer by TXRF. The samples are shown to be ideal candidates for calibration of X-ray fluorescence as the Al signal linearly depends on the film thickness or ALD cycles. Furthermore, the impact of self-absorption of thick layers for TXRF was shown by the samples.
- OSTI ID:
- 21612174
- Journal Information:
- AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657889; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM OXIDES
ATOMIC FORCE MICROSCOPY
CHLORINE
DEPOSITION
ELLIPSOMETRY
LAYERS
NANOSTRUCTURES
REFLECTION
REFLECTIVITY
SELF-ABSORPTION
SILICON OXIDES
SURFACES
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS
ABSORPTION
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL ANALYSIS
ELEMENTS
FILMS
HALOGENS
MEASURING METHODS
MICROSCOPY
NONDESTRUCTIVE ANALYSIS
NONMETALS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SORPTION
SURFACE PROPERTIES
X-RAY EMISSION ANALYSIS