Analytical Study of BAM (Al/GaAs) and Photovoltaic Samples Using State-of-The-Art Auger Nanoprobes

Journal Article · Thu Nov 10 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3657875· OSTI ID:21612170

Yadav, P ^[1]; Bouttemy, M; Vigneron, J; Etcheberry, A ^[1]; Martinez, E; Renault, O; Mur, P; Chabli, A ^[2]; Munoz, D ^[3]

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1. Institut Lavoisier de Versailles, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)
2. CEA-LETI, MINATEC Campus, 17 rue des Martyrs - 38054 Grenoble Cedex 9 (France)
3. CEA-Liten, INES, F73377, 50 av. du Lac Leman, Le Bourget du Lac (France)

For the analysis of certified semiconducting Al{sub 0.7}Ga{sub 0.3}As/GaAs superlattices and photovoltaic samples, we used new generations Auger nano-probes such as the JEOL JAMP-9500F Field emission Microprobe and the PHI-700 Xi system. These nano-probes are generally used for the chemical analysis of complex nano-structures at the deca-nanometric scale. In this paper, we first used both systems for the determination of the surface composition of an Al{sub 0.7}Ga{sub 0.3}As/GaAs reference sample. In that, we studied the impact of surface topography on the Auger analysis. Secondly, we used both systems for chemical analysis of photovoltaic samples. Here, we investigated the in-depth chemical composition, in particular the a-Si:H (n)/ZnO/Al and ITO/a-Si:H (p) interfaces, after a specific cross-section preparation. However, limitations such as image drift due to acoustic vibration and heating effects due to continuous bombardment of energetic electrons at the same point are still a big challenge for quick, routine analysis.

• OSTI ID: 21612170
• Journal Information: AIP Conference Proceedings, Vol. 1395, Issue 1; Conference: Conference on frontiers of characterization and metrology for nanoelectronics 2011, Grenoble (France), 23-26 May 2011; Other Information: DOI: 10.1063/1.3657875; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM
ALUMINIUM COMPOUNDS
AUGER ELECTRON SPECTROSCOPY
CHEMICAL ANALYSIS
CHEMICAL COMPOSITION
FIELD EMISSION
GALLIUM ARSENIDES
INTERFACES
NANOSTRUCTURES
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC EFFECT
PROBES
SEMICONDUCTOR DEVICES
SUPERLATTICES
SURFACES
ZINC OXIDES
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
ELECTRON SPECTROSCOPY
ELEMENTS
EMISSION
GALLIUM COMPOUNDS
METALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOELECTRIC EFFECT
PNICTIDES
SPECTROSCOPY
ZINC COMPOUNDS