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Title: X-ray-induced electronic structure change in CuIr{sub 2}S{sub 4}

Journal Article · · Physical Review. B, Condensed Matter and Materials Physics
;  [1]; ; ;  [2];  [3];  [3]
  1. Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada)
  2. CMC-XOR, Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. l-PEM, Pohang University of Science and Technology, Pohang 790-784 (Korea, Republic of)

The electronic structure of CuIr{sub 2}S{sub 4} is investigated using various bulk-sensitive x-ray spectroscopic methods near the Ir L{sub 3} edge: resonant inelastic x-ray scattering (RIXS), x-ray absorption spectroscopy in the partial fluorescence yield mode, and resonant x-ray emission spectroscopy. A strong RIXS signal (0.75 eV) resulting from a charge-density-wave gap opening is observed below the metal-insulator transition temperature of 230 K. The resultant modification of electronic structure is consistent with the density functional theory prediction. In the spin- and charge-dimer disordered phase induced by x-ray irradiation below 50 K, we find that a broad peak around 0.4 eV appears in the RIXS spectrum.

OSTI ID:
21596876
Journal Information:
Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 12; Other Information: DOI: 10.1103/PhysRevB.84.125135; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
Country of Publication:
United States
Language:
English