Combinatorial study of WInZnO films deposited by rf magnetron co-sputtering

Journal Article · Thu Sep 15 00:00:00 EDT 2011 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2011.07.024· OSTI ID:21580254

Oh, Byeong-Yun; Park, Jae-Cheol ^[1]; Lee, Young-Jun ^[1]; Cha, Sang-Jun ^[2]; Kim, Joo-Hyung ^[3]; Kim, Kwang-Young; Kim, Tae-Won ^[1]; Heo, Gi-Seok ^[1]

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1. National Center for Nanoprocess and Equipments, Korea Institute of Industrial Technology (KITECH), 110-9 Oryong-dong, Buk-gu, Gwangju 500-480 (Korea, Republic of)
2. Department of Physics, Chonnam National University, 300 Yongbong-dong, Buk-gu, Gwangju 500-757 (Korea, Republic of)
3. Department of Electronic Engineering, Chosun University, 375 Seoseok-dong, Dong-gu, Gwangju 501-759 (Korea, Republic of)

The compositional dependence of co-sputtered tungsten indium zinc oxide (WInZnO) film properties was first investigated by means of a combinatorial technique. Indium zinc oxide (IZO) and WO{sub 3} targets were used with different target power. W composition ratio [W/(In+Zn+W)] was varied between 3 and 30 at% and film thickness was reduced as the sample position moved toward WO{sub 3} target. Furthermore, the optical bandgap energy increased gradually, which might be affected by the reduction in film thickness. All the WInZnO films showed an amorphous phase regardless of the W/(In+Zn+W) ratio. As the W/(In+Zn+W) ratio in WInZnO films increased, the carrier concentration was restricted, causing the increase in electrical resistivity. W cations worked as oxygen binders in determining the electronic properties, resulting in suppressing the formation of oxygen vacancies. Consequentially, W metal cations were effectively incorporated into the WInZnO films as a suppressor against the oxygen vacancies and the carrier generation by employing the combinatorial technique. - Graphical abstract: The film thickness and the sheet resistance (R{sub s}) with respect to the sample position of WInZnO films, which is compositionally graded by rf power for each target, are exhibited. Highlights: > The compositional dependence of co-sputtered WInZnO film properties is first investigated. > W cations work as oxygen binders in determining the electronic properties. > All the WInZnO films show an amorphous phase regardless of the W/(In+Zn+W) ratio. > W metal cations are effectively incorporated into the WInZnO films by the combinatorial technique.

• OSTI ID: 21580254
• Journal Information: Journal of Solid State Chemistry, Vol. 184, Issue 9; Other Information: DOI: 10.1016/j.jssc.2011.07.024; PII: S0022-4596(11)00402-6; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
AMORPHOUS STATE
CATIONS
ELECTRIC CONDUCTIVITY
FILMS
INDIUM
LAYERS
MAGNETRONS
OXYGEN
SPUTTERING
THICKNESS
TUNGSTATES
TUNGSTEN
TUNGSTEN OXIDES
ZINC OXIDES
CHALCOGENIDES
CHARGED PARTICLES
DIMENSIONS
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
IONS
METALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
REFRACTORY METALS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
ZINC COMPOUNDS