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Title: One-step growth of Si{sub 3}N{sub 4} stem-branch featured nanostructures: Morphology control by VS and VLS mode

Journal Article · · Journal of Solid State Chemistry
;  [1];  [2]; ; ;  [1]
  1. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012 (China)
  2. Institute of Materials Research (IMO), Hasselt University, Wetenschapspark 1, BE-3590 Diepenbeek (Belgium)

We report here one-step synthesis of Si{sub 3}N{sub 4} nanodendrites by selectively applying a vapor-solid (VS) and vapor-liquid-solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400-750 nm, suggesting their potential applications in light and electron emission devices. - Graphical abstract: Spine-shaped and pine-shaped Si{sub 3}N{sub 4} hierarchical nanostructures were synthesized by VS and VLS mode with plasma-assisted dc arc discharge method. Highlights: > Si{sub 3}N{sub 4} stem-branch featured nanostructures have been prepared. > Spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. > Pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process.

OSTI ID:
21580243
Journal Information:
Journal of Solid State Chemistry, Vol. 184, Issue 9; Other Information: DOI: 10.1016/j.jssc.2011.06.041; PII: S0022-4596(11)00369-0; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English