Thermodynamic aspects of formation of quantum-dimensional GaN-based heterostructures

Journal Article · Tue Dec 15 00:00:00 EST 2009 · Semiconductors

DOI:https://doi.org/10.1134/S106378260913003X· OSTI ID:21562388

Vigdorovich, E. N., E-mail: [e-mail] ^[1]

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1. Moscow State University of Instrument Making and Computer Science (Russian Federation)

From the viewpoint of the Gibbs classical thermodynamics, the mechanism of GaN vapor-phase crystallization is analyzed. When investigating the formation of neutral complexes of acceptor impurities with hydrogen, the key statements of the Rice and Debye-Hueckel theory are used. On the basis of the molecular-interaction analysis, the instability regions in the GaN-InN and GaN-AlN systems are revealed. Under the MOC-hydride-technology conditions, the dependences of the change in the composition of crystallizing solid solutions on the vapor-phase composition are determined.

• OSTI ID: 21562388
• Journal Information: Semiconductors, Vol. 43, Issue 13; Other Information: DOI: 10.1134/S106378260913003X; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPLEXES
CRYSTALLIZATION
GALLIUM NITRIDES
HYDRIDES
HYDROGEN
IMPURITIES
INDIUM NITRIDES
INSTABILITY
INTERACTIONS
SOLID SOLUTIONS
THERMODYNAMICS
VAPORS
DISPERSIONS
ELEMENTS
FLUIDS
GALLIUM COMPOUNDS
GASES
HOMOGENEOUS MIXTURES
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
MIXTURES
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHASE TRANSFORMATIONS
PNICTIDES
SOLUTIONS