Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films
Abstract
The effect of redox media on the formation of acceptor centers in the Cd{sub x}Hg{sub 1-x}Te films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a decrease in the conductivity and the mobility of charge carriers by nearly two orders of magnitude. It is shown that, on the treatments, a source of acceptors is formed at the surface, and the acceptors are most likely mercury vacancies.
- Authors:
- Publication Date:
- OSTI Identifier:
- 21562387
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 43; Journal Issue: 13; Other Information: DOI: 10.1134/S1063782609130041; Copyright (c) 2009 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; CHARGE CARRIERS; FILMS; GALLIUM ARSENIDES; MERCURY; MOLECULAR BEAM EPITAXY; STABILITY; SUBSTRATES; SURFACES; VACANCIES; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; METALS; PNICTIDES; POINT DEFECTS
Citation Formats
Varavin, V S, and Sidorov, G. Yu., E-mail: George007@yandex.ru. Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films. United States: N. p., 2009.
Web. doi:10.1134/S1063782609130041.
Varavin, V S, & Sidorov, G. Yu., E-mail: George007@yandex.ru. Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films. United States. https://doi.org/10.1134/S1063782609130041
Varavin, V S, and Sidorov, G. Yu., E-mail: George007@yandex.ru. 2009.
"Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films". United States. https://doi.org/10.1134/S1063782609130041.
@article{osti_21562387,
title = {Formation of acceptor centers under the action of redox media on the surface of Cd{sub x}Hg{sub 1-x}Te films},
author = {Varavin, V S and Sidorov, G. Yu., E-mail: George007@yandex.ru},
abstractNote = {The effect of redox media on the formation of acceptor centers in the Cd{sub x}Hg{sub 1-x}Te films grown by molecular beam epitaxy on the GaAs (301) substrates is studied. When tested for long-term stability, the untreated n-type films do not change their parameters, whereas the treated films exhibit a decrease in the conductivity and the mobility of charge carriers by nearly two orders of magnitude. It is shown that, on the treatments, a source of acceptors is formed at the surface, and the acceptors are most likely mercury vacancies.},
doi = {10.1134/S1063782609130041},
url = {https://www.osti.gov/biblio/21562387},
journal = {Semiconductors},
issn = {1063-7826},
number = 13,
volume = 43,
place = {United States},
year = {Tue Dec 15 00:00:00 EST 2009},
month = {Tue Dec 15 00:00:00 EST 2009}
}
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