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Title: Resonant raman scattering and dispersion of polar optical and acoustic phonons in hexagonal inn

Journal Article · · Semiconductors
; ;  [1];  [2]; ;  [3]; ; ;  [4]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. Russian Academy of Sciences, Kirensky Institute of Physics (Russian Federation)
  3. Cornell University, Department of Electrical and Computer Engineering (United States)
  4. National Tsing-Hua University, Department of Physics (China)

It is shown that a study of the dependence of impurity-related resonant first-order Raman scattering on the frequency of excitation light makes it possible to observe the dispersion of polar optical and acoustic branches of vibrational spectrum in hexagonal InN within a wide range of wave vectors. It is established that the wave vectors of excited phonons are uniquely related to the energy of excitation photon. Frequencies of longitudinal optical phonons E{sub 1}(LO) and A{sub 1}(LO) in hexagonal InN were measured in the range of excitation-photon energies from 2.81 to 1.17 eV and the frequencies of longitudinal acoustic phonons were measured in the range 2.81-1.83 eV of excitation-photon energies. The obtained dependences made it possible to extrapolate the dispersion of phonons A{sub 1}(LO) and E{sub 1}(LO) to as far as the point {Gamma} in the Brillouin zone and estimate the center-band energies of these phonons (these energies have not been uniquely determined so far).

OSTI ID:
21562355
Journal Information:
Semiconductors, Vol. 44, Issue 2; Other Information: DOI: 10.1134/S1063782610020065; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English