High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)

Astakhova, A P; Golovin, A S; Il'inskaya, N D; Kalinina, K V; Serebrennikova, O Yu; Stoyanov, N D; Horvath, Zs J; Yakovlev, Yu P

doi:10.1134/S1063782610020235

Title: High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)

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Abstract

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength {lambda} = 3.3-3.4 {mu}m is as high as 22.3%. The optical emission power of the LEDs is 140 {mu}W at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.

Authors:

Astakhova, A P; Golovin, A S; Il'inskaya, N D; Kalinina, K V; Serebrennikova, O Yu; Stoyanov, N D ^[1]; Horvath, Zs J ^[2]; Yakovlev, Yu P ^[1]

Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science (Hungary)

Publication Date:: Mon Feb 15 00:00:00 EST 2010

OSTI Identifier:: 21562341

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 44; Journal Issue: 2; Other Information: DOI: 10.1134/S1063782610020235; Copyright (c) 2010 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; CRYSTALS; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; INDIUM ARSENIDES; INJECTION; LAYERS; LIGHT EMITTING DIODES; METHANE; ORGANOMETALLIC COMPOUNDS; QUANTUM EFFICIENCY; RECOMBINATION; SPECTROSCOPY; SUBSTRATES; VAPOR PHASE EPITAXY; WAVELENGTHS; ALKANES; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EFFICIENCY; EMISSION; EPITAXY; HYDROCARBONS; INDIUM COMPOUNDS; INTAKE; LUMINESCENCE; ORGANIC COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Citation Formats


                    Astakhova, A P, Golovin, A S, Il'inskaya, N D, Kalinina, K V, Kizhayev, S. S., E-mail: serguie@mail.ru, Serebrennikova, O Yu, Stoyanov, N D, Horvath, Zs J, and Yakovlev, Yu P. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m).  United States: N. p., 2010. 
        Web.  doi:10.1134/S1063782610020235.

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                    Astakhova, A P, Golovin, A S, Il'inskaya, N D, Kalinina, K V, Kizhayev, S. S., E-mail: serguie@mail.ru, Serebrennikova, O Yu, Stoyanov, N D, Horvath, Zs J, & Yakovlev, Yu P. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m).  United States.  https://doi.org/10.1134/S1063782610020235

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                    Astakhova, A P, Golovin, A S, Il'inskaya, N D, Kalinina, K V, Kizhayev, S. S., E-mail: serguie@mail.ru, Serebrennikova, O Yu, Stoyanov, N D, Horvath, Zs J, and Yakovlev, Yu P. 2010.  
        "High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)".  United States.  https://doi.org/10.1134/S1063782610020235.

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@article{osti_21562341,

  title        = {High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ({lambda} {approx} 3.3 {mu}m)},

  author       = {Astakhova, A P and Golovin, A S and Il'inskaya, N D and Kalinina, K V and Kizhayev, S. S., E-mail: serguie@mail.ru and Serebrennikova, O Yu and Stoyanov, N D and Horvath, Zs J and Yakovlev, Yu P},

  abstractNote = {Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength {lambda} = 3.3-3.4 {mu}m is as high as 22.3%. The optical emission power of the LEDs is 140 {mu}W at a current of 1 A in the quasi-continuous mode and reaches a value of 5.5 mW at a current of 9 A in the pulsed mode.},

  doi          = {10.1134/S1063782610020235},

  url          = {https://www.osti.gov/biblio/21562341},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 2,

  volume       = 44,

  place        = {United States},

  year         = {Mon Feb 15 00:00:00 EST 2010},

  month        = {Mon Feb 15 00:00:00 EST 2010}

}

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