Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals
Abstract
The crystal structure, density of electron states, electron transport, and magnetic characteristics of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals (R) have been studied in the ranges of temperatures 1.5-400 K, concentrations of rare-earth metal 9.5 x 10{sup 19}-9.5 x 10{sup 21} cm{sup -3}, and magnetic fields H {<=} 15 T. The regions of existence of Zr{sub 1-x}R{sub x}NiSn solid solutions are determined, criteria for solubility of atoms of rare-earth metals in ZrNiSn and for the insulator-metal transition are formulated, and the nature of 'a priori doping' of ZrNiSn is determined as a result of redistribution of Zr and Ni atoms at the crystallographic sites of Zr. Correlation between the concentration of the R impurity, the amplitude of modulation of the bands of continuous energies, and the degree of occupation of potential wells of small-scale fluctuations with charge carriers is established. The results are discussed in the context of the Shklovskii-Efros model of a heavily doped and compensated semiconductor.
- Authors:
-
- CNRS, Institute Neel (France)
- Ivan Franko Lviv National University (Ukraine)
- Lvivska Politechnika National University (Ukraine)
- Publication Date:
- OSTI Identifier:
- 21562337
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 44; Journal Issue: 3; Other Information: DOI: 10.1134/S1063782610030048; Copyright (c) 2010 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ATOMS; CHARGE CARRIERS; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; DENSITY; DOPED MATERIALS; ELECTRONS; FLUCTUATIONS; MAGNETIC FIELDS; RARE EARTHS; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; SOLUBILITY; DISPERSIONS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HOMOGENEOUS MIXTURES; LEPTONS; MATERIALS; METALS; MIXTURES; PHYSICAL PROPERTIES; SOLUTIONS; VARIATIONS
Citation Formats
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Fruchart, D, Hlil, E K, Gladyshevskii, R E, Gignoux, D, Romaka, V V, Kuzhel, B S, and Krayjvskii, R V. Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals. United States: N. p., 2010.
Web. doi:10.1134/S1063782610030048.
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Fruchart, D, Hlil, E K, Gladyshevskii, R E, Gignoux, D, Romaka, V V, Kuzhel, B S, & Krayjvskii, R V. Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals. United States. https://doi.org/10.1134/S1063782610030048
Romaka, V. A., E-mail: vromaka@polynet.lviv.ua, Fruchart, D, Hlil, E K, Gladyshevskii, R E, Gignoux, D, Romaka, V V, Kuzhel, B S, and Krayjvskii, R V. 2010.
"Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals". United States. https://doi.org/10.1134/S1063782610030048.
@article{osti_21562337,
title = {Features of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals},
author = {Romaka, V. A., E-mail: vromaka@polynet.lviv.ua and Fruchart, D and Hlil, E K and Gladyshevskii, R E and Gignoux, D and Romaka, V V and Kuzhel, B S and Krayjvskii, R V},
abstractNote = {The crystal structure, density of electron states, electron transport, and magnetic characteristics of an intermetallic n-ZrNiSn semiconductor heavily doped with atoms of rare-earth metals (R) have been studied in the ranges of temperatures 1.5-400 K, concentrations of rare-earth metal 9.5 x 10{sup 19}-9.5 x 10{sup 21} cm{sup -3}, and magnetic fields H {<=} 15 T. The regions of existence of Zr{sub 1-x}R{sub x}NiSn solid solutions are determined, criteria for solubility of atoms of rare-earth metals in ZrNiSn and for the insulator-metal transition are formulated, and the nature of 'a priori doping' of ZrNiSn is determined as a result of redistribution of Zr and Ni atoms at the crystallographic sites of Zr. Correlation between the concentration of the R impurity, the amplitude of modulation of the bands of continuous energies, and the degree of occupation of potential wells of small-scale fluctuations with charge carriers is established. The results are discussed in the context of the Shklovskii-Efros model of a heavily doped and compensated semiconductor.},
doi = {10.1134/S1063782610030048},
url = {https://www.osti.gov/biblio/21562337},
journal = {Semiconductors},
issn = {1063-7826},
number = 3,
volume = 44,
place = {United States},
year = {Mon Mar 15 00:00:00 EDT 2010},
month = {Mon Mar 15 00:00:00 EDT 2010}
}