skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

Journal Article · · Semiconductors
; ;  [1]
  1. Academy of Sciences of Uzbekistan, Starodubtsev Physicotechnical Institute (Uzbekistan)

The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D{sub ss}). It is shown that the barrier height in the structures under study correlates with the D{sub ss} value and germanium content in the Si{sub 1-x}Ge{sub x} alloy.

OSTI ID:
21562302
Journal Information:
Semiconductors, Vol. 44, Issue 5; Other Information: DOI: 10.1134/S1063782610050106; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English