Excess leakage currents in high-voltage 4H-SiC Schottky diodes

Journal Article · Sat May 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610050180· OSTI ID:21562296

Grekhov, I V; Potapov, A S; Samsonova, T P; Il'inskaya, N D; Kon'kov, O I; Serebrennikova, O Yu ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of 'floating' planar p-n junctions. The analysis of I-V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is 'excessive' in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I-V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.

• OSTI ID: 21562296
• Journal Information: Semiconductors, Vol. 44, Issue 5; Other Information: DOI: 10.1134/S1063782610050180; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRONS
HYDROGEN 4
INTERFACES
LEAKAGE CURRENT
NICKEL
P-N JUNCTIONS
SCHOTTKY BARRIER DIODES
SILICON CARBIDES
TEMPERATURE RANGE
THERMIONIC EMISSION
CARBIDES
CARBON COMPOUNDS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
EMISSION
FERMIONS
HYDROGEN ISOTOPES
ISOTOPES
LEPTONS
LIGHT NUCLEI
LINE DEFECTS
METALS
NUCLEI
ODD-ODD NUCLEI
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SILICON COMPOUNDS
TRANSITION ELEMENTS