Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation

Journal Article · Sat May 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610050234· OSTI ID:21562291

Ivanov, A M ^[1]; Kozlovskii, V V ^[2]; Lebedev, A A; Oganesyan, G A; Strokan, N B ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
2. St. Petersburg State Polytechnic University (Russian Federation)

Rates of carrier removal from the conduction band in n-type FZ-Si and 4H-SiC irradiated with 8- and 15-MeV protons at room temperature are discussed. Calculated rates of formation of primary radiation defects (Frenkel pairs) in these materials are presented and compared with the corresponding experimental values. Protons create defects in collision cascades involving recoil atoms formed in the crystal lattice itself. The results are compared with similar data previously obtained in irradiation of n-type FZ-Si and 4H-SiC with 900-keV electrons, in which case isolated so-called close Frenkel pairs are absolutely dominant among primary radiation defects. It has been found that the E-center model adequately describing the decrease in the electrical conductivity of n-FZ-Si upon electron irradiation is inapplicable to interpretation of experimental data for proton-irradiated materials. It is suggested that a pronounced annealing of 'simple' radiation defects of the type of close Frenkel pairs occurs during irradiation at room temperature.

• OSTI ID: 21562291
• Journal Information: Semiconductors, Vol. 44, Issue 5; Other Information: DOI: 10.1134/S1063782610050234; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMS
COLLISIONS
CRYSTAL LATTICES
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRONS
IRRADIATION
MATERIALS
PROTONS
RECOILS
SILICON
SILICON CARBIDES
BARYONS
CARBIDES
CARBON COMPOUNDS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
HEAT TREATMENTS
LEPTONS
NUCLEONS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON COMPOUNDS