Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

Lopin, A V; Puzikov, V M; Baumer, V N; Dmitruk, I N

doi:10.1134/S1063782610060229

Title: Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

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Abstract

The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

Authors:

Lopin, A V; Puzikov, V M; Baumer, V N ^[1]; Dmitruk, I N ^[2]

National Academy of Sciences of Ukraine, Institute for Single Crystals (Ukraine)
National Academy of Sciences of Ukraine, Institute of Physics (Ukraine)

Publication Date:: Tue Jun 15 00:00:00 EDT 2010

OSTI Identifier:: 21562270

Resource Type:: Journal Article

Journal Name:: Semiconductors

Additional Journal Information:: Journal Volume: 44; Journal Issue: 6; Other Information: DOI: 10.1134/S1063782610060229; Copyright (c) 2010 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ABSORPTION SPECTRA; CRYSTALS; DEPOSITION; FABRICATION; HEATING; LAYERS; NANOSTRUCTURES; PEAKS; PHOTOLUMINESCENCE; SILICON CARBIDES; SPECTROSCOPY; SUBSTRATES; TRIGONAL LATTICES; X-RAY DIFFRACTION; CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; EMISSION; LUMINESCENCE; PHOTON EMISSION; SCATTERING; SILICON COMPOUNDS; SPECTRA

Citation Formats


                    Semenov, A. V., E-mail: semenov@isc.kharkov.ua, Lopin, A V, Puzikov, V M, Baumer, V N, and Dmitruk, I N. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes.  United States: N. p., 2010. 
        Web.  doi:10.1134/S1063782610060229.

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                    Semenov, A. V., E-mail: semenov@isc.kharkov.ua, Lopin, A V, Puzikov, V M, Baumer, V N, & Dmitruk, I N. Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes.  United States.  https://doi.org/10.1134/S1063782610060229

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                    Semenov, A. V., E-mail: semenov@isc.kharkov.ua, Lopin, A V, Puzikov, V M, Baumer, V N, and Dmitruk, I N. 2010.  
        "Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes".  United States.  https://doi.org/10.1134/S1063782610060229.

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@article{osti_21562270,

  title        = {Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes},

  author       = {Semenov, A. V., E-mail: semenov@isc.kharkov.ua and Lopin, A V and Puzikov, V M and Baumer, V N and Dmitruk, I N},

  abstractNote = {The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic 3C polytype (the lower layer on the substrate) and the rhombohedral 21R polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.},

  doi          = {10.1134/S1063782610060229},

  url          = {https://www.osti.gov/biblio/21562270},
  journal      = {Semiconductors},

  issn         = {1063-7826},

  number       = 6,

  volume       = 44,

  place        = {United States},

  year         = {Tue Jun 15 00:00:00 EDT 2010},

  month        = {Tue Jun 15 00:00:00 EDT 2010}

}

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