Effect of oxygen plasma on the properties of tantalum oxide films

Journal Article · Wed Sep 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610090216· OSTI ID:21562216

Zarubin, A N; Novikov, V A; Petrova, Yu S; Skakunov, M S; Tolbanov, O P; Tyazhev, A V; Yaskevich, T M ^[1]

---

1. Tomsk State University, Kuznetsov Siberian Physical Technical Institute (Russian Federation)

The effect of oxygen plasma on the leakage current, permittivity, and the dielectric loss tangent of Ta{sub 2}O{sub 5} thin layers (300-400 nm) is studied. It is suggested to treat tantalum oxide films in oxygen plasma to control their electrical and dielectric characteristics.

• OSTI ID: 21562216
• Journal Information: Semiconductors, Vol. 44, Issue 9; Other Information: DOI: 10.1134/S1063782610090216; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CONTROL
DIELECTRIC MATERIALS
LEAKAGE CURRENT
OXYGEN
PERMITTIVITY
PLASMA
TANTALUM OXIDES
THIN FILMS
CHALCOGENIDES
CURRENTS
DIELECTRIC PROPERTIES
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
MATERIALS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
REFRACTORY METAL COMPOUNDS
TANTALUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS