Conductance simulation in an a-Si:H thin-film transistor with Schottky barriers
- Russian Academy of Sciences, Siberian Branch, Institute of Semiconductor Physics (Russian Federation)
It is shown by numerical simulation that the drain-source Schottky contacts substantially control the conductance of a thin-film transistor in the above-barrier region. At a barrier height in excess of 0.75 eV, the effect of crowding manifests itself; this effect is caused by an increase in electric field at the edge of the source electrode as the pulling voltage is increased, which brings about a local lowering of the barrier and an increase in the current through the reverse-biased Schottky barrier. The effective mobility in the thin-film transistor is controlled by the film and is independent of the barrier height.
- OSTI ID:
- 21562215
- Journal Information:
- Semiconductors, Vol. 44, Issue 9; Other Information: DOI: 10.1134/S1063782610090253; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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