Specific features of intervalley scattering of charge carriers in n-Si at high temperatures
In n-Si, intervalley scattering of electrons can be of two types, f scattering and g scattering. With the purpose of establishing the contributions of f- and g-type transitions to intervalley scattering, the piezoresistance of n-Si crystals is studied in the temperature range T = 295-363 K. The initial concentration of charge carriers in the n-Si samples is 1.1 x 10{sup 14} cm{sup -3}, and the resistivity at 300 K is {rho} = 30 {Omega} cm. As the temperature is increased, the region of leveling-off of the piezoresistance shifts to lower voltages. The characteristic feature of the dependence {rho} = {rho}(T) plotted in the double logarithmic coordinates (log{rho} = f(logT)) is the transition from the slope 1.68 to the slope 1.83 at T > 330 K. This is attributed to the substantial contribution of g transitions to intervalley scattering in the high-temperature region. For verification of the interpretation of the dependence {rho} = {rho}(T), the dependence is calculated on the basis of the theory of anisotropic scattering with consideration for intervalley transitions.
- OSTI ID:
- 21562212
- Journal Information:
- Semiconductors, Vol. 44, Issue 10; Other Information: DOI: 10.1134/S1063782610100039; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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