Quantum model of electron accumulation at charged boundaries of heavily doped semiconductor films

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100106· OSTI ID:21562207

Gergel, V. A., E-mail: [e-mail]; Verhovtseva, A. V., E-mail: [e-mail] ^[1]

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1. Institute of Radio Engineering and Electronics (Russian Federation)

A new quantum model of electron accumulation at positively charged boundaries of semiconductor films has been developed. It is based on the well-known concepts of quantum confinement of transverse electron motion in a uniform electric field, the role of which is played by the effective field of attraction to positive surface donor centers. Electrons with a surface density equal to the donor concentration occupy the corresponding quasi-discrete states according to the Fermi statistics. At reasonable concentrations all the electrons of the accumulation layer are mainly concentrated at the first quantum-confinement level. Ultra-high built-in fields on the order of the atomic level (10{sup 8} V/cm) correspond to the onset of filling the third level. The potential profile, which describes the interaction of the accumulation-layer electrons with other charged particles (including holes) is calculated by double integration of the Poisson equation with the electron density in the form of squares of the corresponding segments of the Airy function. Its boundary value-the surface potential-describes the effect of the electron-accumulation layer on the external electric circuit. The obtained dependence of the surface potential on the resulting boundary electric field (including that induced by the built-in charge) is easily transformed into the corresponding capacitance-voltage characteristics.

• OSTI ID: 21562207
• Journal Information: Semiconductors, Vol. 44, Issue 10; Other Information: DOI: 10.1134/S1063782610100106; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIRY FUNCTIONS
BUILDUP
CHARGED PARTICLES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRIC POTENTIAL
ELECTRON DENSITY
ELECTRONS
FERMI STATISTICS
FILMS
INTERACTIONS
LAYERS
POISSON EQUATION
SEMICONDUCTOR MATERIALS
SURFACE POTENTIAL
SURFACES
DIFFERENTIAL EQUATIONS
ELEMENTARY PARTICLES
EQUATIONS
FERMIONS
FUNCTIONS
LEPTONS
MATERIALS
PARTIAL DIFFERENTIAL EQUATIONS
POTENTIALS