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Title: Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots

Analysis of mechanisms of carrier emission in the p-i-n structures with In(Ga)As quantum dots With the help of the photocurrent spectroscopy, the mechanism of emission of charge carriers from energy levels of the (In,Ga)As/(Al,Ga)As quantum dots of different design are studied. Thermal activation is shown to be the main mechanism of carrier emission from the quantum dots for the isolated layer of quantum dots separated by wide (Al,Ga)As spacer layers. At a small width of the (Al,Ga)As spacer layer, when electron binding of separate layers of the quantum dots in the vertical direction takes place, the role of the tunneling mechanism of carrier emission between the vertically coupled quantum dots increases.
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Publication Date:
OSTI Identifier:21562205
Resource Type:Journal Article
Resource Relation:Journal Name: Semiconductors; Journal Volume: 44; Journal Issue: 10; Other Information: DOI: 10.1134/S106378261010012X; Copyright (c) 2010 Pleiades Publishing, Ltd.
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; CARRIERS; CHARGE CARRIERS; DESIGN; ELECTRONS; EMISSION; ENERGY LEVELS; LAYERS; QUANTUM DOTS; SPACERS; SPECTROSCOPY; TUNNEL EFFECT ELEMENTARY PARTICLES; FERMIONS; LEPTONS; NANOSTRUCTURES