A single-spatial-mode semiconductor laser based on InAs/InGaAs quantum dots with a diffraction filter of optical modes

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100192· OSTI ID:21562199

Novikov, I I ^[1]; Kuznetsov, A M ^[2]; Shernyakov, Yu M; Maximov, M V; Zhukov, A E; Chunareva, A V ^[1]; Payusov, A S ^[2]; Livshits, D A; Kovsh, A R ^[3]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
2. St. Petersburg Academic University, Nanotechnology Research and Education Center of the Russian Academy of Sciences (Russian Federation)
3. Innolume GmbH (Germany)

The concept of a diffraction optical filter is used for prevention of high-order mode oscillation in a design of stripe laser diodes with an active region based on InAs/InGaAs quantum dots emitting in the 1.3-{mu}m wavelength range grown on GaAs substrates. Incorporation of such a filter made it possible to increase the width of the stripe and obtain an output power as high as 700 mW with retention of a single-spatial-mode character of lasing.

• OSTI ID: 21562199
• Journal Information: Semiconductors, Vol. 44, Issue 10; Other Information: DOI: 10.1134/S1063782610100192; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DIFFRACTION
GALLIUM ARSENIDES
INDIUM ARSENIDES
OPTICAL FILTERS
OPTICAL MODES
QUANTUM DOTS
RETENTION
SEMICONDUCTOR LASERS
SUBSTRATES
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
FILTERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
NANOSTRUCTURES
OSCILLATION MODES
PNICTIDES
SCATTERING
SEMICONDUCTOR DEVICES
SOLID STATE LASERS