Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

Journal Article · Fri Oct 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610100246· OSTI ID:21562194

Mokhov, E N ^[1]

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1. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)

The dependence of the layer growth rate on nitrogen pressure in a reactor has been examined in order to analyze the conditions of growth of AlN thick layers and bulk crystals by the sublimation sandwich method. It is shown that the layer growth rate steadily increases as the pressure in the reactor is lowered within the range 1-0.02 bar. This suggests that a key role in the layer growth kinetics is played by the source-to-substrate transfer of the components (Al, N), rather than by their adsorption (desorption) on the substrate surface.

• OSTI ID: 21562194
• Journal Information: Semiconductors, Vol. 44, Issue 10; Other Information: DOI: 10.1134/S1063782610100246; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
ALUMINIUM NITRIDES
CRYSTALS
DESORPTION
KINETICS
LAYERS
NITROGEN
SUBLIMATION
SUBSTRATES
SURFACES
ALUMINIUM COMPOUNDS
ELEMENTS
EVAPORATION
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHASE TRANSFORMATIONS
PNICTIDES
SORPTION