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Title: Control of emission wavelength for InGaAs/GaAs quantum wells and laser structures on their basis by means of proton irradiation

Journal Article · · Semiconductors
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  1. Lobachevsky Nizhni Novgorod State University, Physicotechnical Research Institute (Russian Federation)

Features of controlling the wavelength of emission from laser heterostructures with strained InGaAs/GaAs quantum wells by irradiation with medium-energy (with the energy as high as 150 keV) protons are studied. It is established that irradiation with H{sup +} ions and subsequent thermal annealing at a temperature of 700 deg. C make it possible to decrease the wavelength of emission from quantum wells. As the dose of ions is increased from 10{sup 13} to 10{sup 16} cm{sup -2}, the magnitude of change in the wavelength increases to 20 nm. Starting with a dose of 10{sup 15} cm{sup -2}, a significant decrease in the intensity of emission is observed. The optimum dose of H{sup +} ions (6 x 10{sup 14} cm{sup -2}) and annealing temperature (700 deg. C) for modifying the InGaAs/GaAs/InGaP laser structures are determined; it is shown that, in this case, one can obtain a shift of {approx}(8-10) nm for the wavelength of laser radiation with low losses in intensity with the quality of the surface of laser structures retained. The observed 'blue' shift is caused by implantation-stimulated processes of intermixing of the In and Ga atoms at the InGaAs/GaAs interface.

OSTI ID:
21562182
Journal Information:
Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110138; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English