Special features of the excitation spectra and kinetics of photoluminescence of the Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110205· OSTI ID:21562176

Yablonskiy, A N; Stepikhova, M V; Drozdov, Yu N ^[1]; Shengurov, V G ^[2]; Krasilnik, Z F ^[1]

---

1. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
2. Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)

Luminescent properties of heteroepitaxial Si{sub 1-x}Ge{sub x}:Er/Si structures with relaxed heterolayers are studied. The results of combined studies of the excitation spectra and kinetics of photoluminescence (PL) are used to single out the components providing the largest contribution to the PL signal of the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1.54 {mu}m. It is shown that relaxation of elastic stresses in the Si{sub 1-x}Ge{sub x}:Er heterolayer affects only slightly the kinetic characteristics of erbium luminescence and manifests itself in insignificant contribution of the defects and defect-impurity complexes to the luminescent response of the Si{sub 1-x}Ge{sub x}:Er/Si structures. In the excitation spectra of the erbium PL, special features related to the possibility of the rare-earth impurity excitation at energies lower than the band gap of the Si{sub 1} {sub -x}Ge{sub x} solid solution are revealed. It is shown that a peak the width of which depends on the band gap of the solid solution and the extent of its relaxation is observed in the excitation spectra of the erbium-related PL in the Si{sub 1-x}Ge{sub x}:Er/Si structures in the wavelength region of 1040-1050 nm. The observed specific features are accounted for by involvement of intermediate levels in the band gap of the Si{sub 1-x}Ge{sub x}:Er solid solution in the process of excitation of an Er{sup 3+} ion.

• OSTI ID: 21562176
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110205; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPLEXES
DEFECTS
ERBIUM
ERBIUM IONS
EXCITATION
IMPURITIES
KINETICS
PEAKS
PHOTOLUMINESCENCE
RELAXATION
SIGNALS
SOLID SOLUTIONS
SPECTRA
STRESSES
WAVELENGTHS
CHARGED PARTICLES
DISPERSIONS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
HOMOGENEOUS MIXTURES
IONS
LUMINESCENCE
METALS
MIXTURES
PHOTON EMISSION
RARE EARTHS
SOLUTIONS