Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p{sup +}/n{sup +}/n-Si:Er

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610110217· OSTI ID:21562175

Kuznetsov, V P ^[1]; Kudryavtsev, K E ^[2]; Obolensky, S V ^[3]; Kozlov, V A; Krasil'nik, Z F ^[2]

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1. Lobachevsky State University, Physicotechnical Research Institute (Russian Federation)
2. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
3. Lobachevsky State University (Russian Federation)

The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) p{sup +}/n{sup +}/n-Si:Er, emitting under reverse bias on the p{sup +}/n{sup +} junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavelength {lambda} {approx} 1.5 {mu}m ({approx}5 {mu}W), external quantum efficiency ({approx}10{sup -5}), and excitation efficiency of erbium ions ({approx}2 x 10{sup -20} cm{sup 2} s) have been determined. At the same excitation efficiency, tunnel transit-time LEDs exhibit higher emission power in comparison with p{sup +}/n-Si:Er diode structures. The experimental results are compared with the model predictions for these structures. The factors limiting the electroluminescence intensity and impact excitation efficiency for erbium ions in tunnel transit-time LEDs are discussed.

• OSTI ID: 21562175
• Journal Information: Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110217; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BREAKDOWN
COMPARATIVE EVALUATIONS
ELECTROLUMINESCENCE
ERBIUM IONS
EXCITATION
FORECASTING
LIGHT EMITTING DIODES
NITROGEN IONS
PHOSPHORUS IONS
QUANTUM EFFICIENCY
SILICON
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS
CHARGED PARTICLES
EFFICIENCY
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
EVALUATION
IONS
LUMINESCENCE
PHOTON EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
TEMPERATURE RANGE