Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure
- Moscow State Institute of Electronic Engineering (Technical University) (Russian Federation)
Results of simulation of stresses in the test structure of a silicon beam and analytical calculation of piezoelectric modulus d{sub 31} of a lead zirconate-titanate (PZT) thin film arranged in the region of an elastic element are presented. The characteristics of the sensitive element of acceleration are calculated based on a PZT thin film with an inertial mass made of silicon.
- OSTI ID:
- 21562167
- Journal Information:
- Semiconductors, Vol. 44, Issue 13; Other Information: DOI: 10.1134/S1063782610130026; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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