Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors
Abstract
Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.
- Authors:
-
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- Publication Date:
- OSTI Identifier:
- 21562146
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 44; Journal Issue: 12; Other Information: DOI: 10.1134/S1063782610120122; Copyright (c) 2010 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; EFFICIENCY; ELECTRONS; OPTIMIZATION; RADIATION DOSES; SERVICE LIFE; SOLAR CELLS; THICKNESS; DIMENSIONS; DIRECT ENERGY CONVERTERS; DOSES; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; LIFETIME; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SOLAR EQUIPMENT
Citation Formats
Emelyanov, V. M., E-mail: resso2003@bk.ru, Kalyuzhniy, N A, Mintairov, S A, Shvarts, M Z, and Lantratov, V M. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors. United States: N. p., 2010.
Web. doi:10.1134/S1063782610120122.
Emelyanov, V. M., E-mail: resso2003@bk.ru, Kalyuzhniy, N A, Mintairov, S A, Shvarts, M Z, & Lantratov, V M. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors. United States. https://doi.org/10.1134/S1063782610120122
Emelyanov, V. M., E-mail: resso2003@bk.ru, Kalyuzhniy, N A, Mintairov, S A, Shvarts, M Z, and Lantratov, V M. 2010.
"Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors". United States. https://doi.org/10.1134/S1063782610120122.
@article{osti_21562146,
title = {Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors},
author = {Emelyanov, V. M., E-mail: resso2003@bk.ru and Kalyuzhniy, N A and Mintairov, S A and Shvarts, M Z and Lantratov, V M},
abstractNote = {Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.},
doi = {10.1134/S1063782610120122},
url = {https://www.osti.gov/biblio/21562146},
journal = {Semiconductors},
issn = {1063-7826},
number = 12,
volume = 44,
place = {United States},
year = {Wed Dec 15 00:00:00 EST 2010},
month = {Wed Dec 15 00:00:00 EST 2010}
}