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Title: High frequency characteristics of FeCoAlO thin films combined the effects of stress and magnetic field

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3551593· OSTI ID:21562143
; ; ; ;  [1];  [2];  [3];  [4]
  1. Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China)
  2. Lab of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)
  3. Department of Information Engineering, Shinshu University, Nagano 380-8553 (Japan)
  4. Department of Physics, East China Normal University, Shanghai 200062 (China)

The soft magnetic FeCoAlO thin films with different response at high frequency were prepared by using RF magnetron sputtering. Two different configurations of the sputtering targets were used: the Al{sub 2}O{sub 3} chips were placed on Fe{sub 70}Co{sub 30} disk either uniformly dispersed on the sputtering area (Target-A) or dispersed on the half side of the sputtering area (Target-B). It was found that, although, the films deposited from both of Target A and B possessed good soft magnetic properties and in-plane uniaxial magnetic anisotropy, they showed different behaviors at high frequency. The films deposited by using Target-A have mean permeability of 500 and a cut-off frequency (f{sub r}) of around 780 MHz, while the films deposited by using Target-B have mean permeability of 200 and a f{sub r} of 3.4 GHz. The higher f{sub r} of the later corresponds to the higher uniaxial anisotropic field in the films deposited by using the Target-B, which due to an extra anisotropy induced by the stress resulted from gradient of the Al-O composition. By adjusting the configuration of Target-B, the permeability and f{sub r} can be tuned to satisfy the different requirements for certain industrial applications.

OSTI ID:
21562143
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3551593; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English