Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Journal Article · Sun May 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3586042· OSTI ID:21560264

Beyer, F C; Hemmingsson, C; Pedersen, H; Henry, A; Janzen, E ^[1]; Isoya, J ^[2]; Morishita, N; Ohshima, T ^[3]

---

1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
2. Graduate School of Library, Information and Media Studies, University of Tsukuba, Tsukuba, Ibaraki 305-8550 (Japan)
3. Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

After low-energy electron irradiation of epitaxial n-type 4H-SiC with a dose of 5x10{sup 16} cm{sup -2}, the bistable M-center, previously reported in high-energy proton implanted 4H-SiC, is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is confirmed, and an enhanced recombination process is suggested. The annihilation process is coincidental with the evolvement of the bistable EB-centers in the low temperature range of the DLTS spectrum. The annealing energy of the M-center is similar to the generation energy of the EB-centers, thus partial transformation of the M-center to the EB-centers is suggested. The EB-centers completely disappeared after annealing temperatures higher than 700 deg. C without the formation of new defects in the observed DLTS scanning range. The threshold energy for moving Si atom in SiC is higher than the applied irradiation energy, and the annihilation temperatures are relatively low, therefore the M-center, EH1 and EH3, as well as the EB-centers are attributed to defects related to the C atom in SiC, most probably to carbon interstitials and their complexes.

• OSTI ID: 21560264
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 10; Other Information: DOI: 10.1063/1.3586042; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ANNIHILATION
ATOMS
CARBON
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRON BEAMS
ELECTRONS
EPITAXY
INTERSTITIALS
IRRADIATION
LAYERS
M CENTERS
PROTONS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPECTRA
THRESHOLD ENERGY
TRANSFORMATIONS
BARYONS
BEAMS
CARBIDES
CARBON COMPOUNDS
COLOR CENTERS
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
HADRONS
HEAT TREATMENTS
INTERACTIONS
LEPTON BEAMS
LEPTONS
MATERIALS
NONMETALS
NUCLEONS
PARTICLE BEAMS
PARTICLE INTERACTIONS
POINT DEFECTS
SILICON COMPOUNDS
SPECTROSCOPY
VACANCIES