Magnetic anisotropy in (Ga,Mn)As grown on vicinal GaAs: Effects of the orientation of microwave magnetic field
- Institute of Experimental Physics, University of Warsaw, 00-681 Warsaw (Poland)
- Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Ferromagnetic resonance (FMR) study of the magnetic anisotropy in epitaxial (Ga,Mn)As grown on vicinal GaAs is presented. The data collected in the growth plane reveal very limited dependence on the miscut angle {eta}, with a negligible effect of {eta} on the in-plane uniaxial anisotropy. In the out-of-plane configuration, the substrate misorientation has a pronounced influence on FMR, which features are partially explained with a phenomenological treatment of the atomic step-induced anisotropy. This simple model, however, does not account for the miscut-induced dependence of FMR on the orientation of microwave magnetic field, that is observed with the static field applied invariably along the growth direction.
- OSTI ID:
- 21560123
- Journal Information:
- Journal of Applied Physics, Vol. 109, Issue 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3535426; (c) 2011 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ANISOTROPY
FERROMAGNETIC MATERIALS
FERROMAGNETIC RESONANCE
GALLIUM ARSENIDES
LAYERS
MAGNETIC FIELDS
MAGNETIC SEMICONDUCTORS
MANGANESE COMPOUNDS
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
SUBSTRATES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
MAGNETIC MATERIALS
MAGNETIC RESONANCE
MATERIALS
PNICTIDES
RADIATIONS
RESONANCE
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENT COMPOUNDS