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Title: A synchrotron-based photoemission study of the MoO{sub 3}/Co interface

Journal Article · · Journal of Chemical Physics
DOI:https://doi.org/10.1063/1.3546034· OSTI ID:21559985
; ; ;  [1]; ;  [1];  [1]
  1. Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

The electronic structures at the MoO{sub 3}/Co interface were investigated using synchrotron-based ultraviolet and x-ray photoelectron spectroscopy. It was found that interfacial chemical reactions lead to the reduction of Mo oxidation states and the formation of Co-O bonds. These interfacial chemical reactions also induce a large interface dipole, which significantly increases the work function of the cobalt substrate. In addition, two interface states located at 1.0 and 2.0 eV below the Fermi level are identified. These two states overlap at film thickness of between 2-4 nm, which suggests the MoO{sub 3} intermediate layer may facilitate ohmic charge transport.

OSTI ID:
21559985
Journal Information:
Journal of Chemical Physics, Vol. 134, Issue 3; Other Information: DOI: 10.1063/1.3546034; (c) 2011 American Institute of Physics; ISSN 0021-9606
Country of Publication:
United States
Language:
English

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