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Title: A large polarization in Ce-modified bismuth ferrite thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3596825· OSTI ID:21538458
 [1]
  1. College of Materials Science and Metallurgy Engineering, Guizhou University, Guiyang 550003 (China)

Bi{sub 0.95}Ce{sub 0.05}FeO{sub 3} (BCFO) thin films were grown on SrRuO{sub 3}/TiO{sub 2}/SiO{sub 2}/Si(100) substrates via radio frequency sputtering. The BCFO thin film has a (111) orientation with a high phase purity. Improved dielectric behavior is observed for the BCFO thin film as compared with that of pure bismuth ferrite thin film. A large remanent polarization of 2P{sub r} {approx} 183.9 {mu}C/cm{sup 2} is induced in the BCFO thin film, owing to the (111) orientation and the introduction of Ce. The local phase decomposition induced by larger depolarization fields and the oxygen vacancies dominates the fatigue resistance of the BCFO thin film.

OSTI ID:
21538458
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3596825; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English