Femtosecond laser crystallization of amorphous Ge

Journal Article · Wed Jun 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3601356· OSTI ID:21538429

Salihoglu, Omer; Aydinli, Atilla ^[1]; Kueruem, Ulas; Gul Yaglioglu, H; Elmali, Ayhan ^[2]

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1. Physics Department, Bilkent University, Ankara 06800 (Turkey)
2. Department of Engineering Physics, Ankara University, 06100 Ankara (Turkey)

Ultrafast crystallization of amorphous germanium (a-Ge) in ambient has been studied. Plasma enhanced chemical vapor deposition grown a-Ge was irradiated with single femtosecond laser pulses of various durations with a range of fluences from below melting to above ablation threshold. Extensive use of Raman scattering has been employed to determine post solidification features aided by scanning electron microscopy and atomic force microscopy measurements. Linewidth of the Ge optic phonon at 300 cm{sup -1} as a function of laser fluence provides a signature for the crystallization of a-Ge. Various crystallization regimes including nanostructures in the form of nanospheres have been identified.

• OSTI ID: 21538429
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3601356; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
GERMANIUM
LASER RADIATION
NANOSTRUCTURES
RAMAN EFFECT
RAMAN SPECTRA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SOLIDIFICATION
VELOCITY
CHEMICAL COATING
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
MATERIALS
METALS
MICROSCOPY
PHASE TRANSFORMATIONS
RADIATIONS
SPECTRA
SURFACE COATING