skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Elemental distribution and oxygen deficiency of magnetron sputtered indium tin oxide films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3587174· OSTI ID:21538405
; ; ;  [1];  [2]
  1. Institute for Energy Technology, Department of Solar Energy, Instituttveien 18, 2008 Kjeller (Norway)
  2. SINTEF Materials and Chemistry, P.B 124 Blindern, N-0314 Oslo, Norway, and Centre for Material Science and Nanotechnology, University of Oslo (Norway)

The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiO{sub x} was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiO{sub x} interface layer thickness.

OSTI ID:
21538405
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 11; Other Information: DOI: 10.1063/1.3587174; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

Similar Records

Effect of cesium assistance on the electrical and structural properties of indium tin oxide films grown by magnetron sputtering
Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:21538405

Reactive magnetron sputtering of Cu{sub 2}O: Dependence on oxygen pressure and interface formation with indium tin oxide
Journal Article · Wed Jun 01 00:00:00 EDT 2011 · Journal of Applied Physics · OSTI ID:21538405

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells
Journal Article · Mon Mar 02 00:00:00 EST 2020 · Solar Energy Materials and Solar Cells · OSTI ID:21538405