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Title: Magnetic properties of MnSb inclusions formed in GaSb matrix directly during molecular beam epitaxial growth

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3562171· OSTI ID:21538229
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  1. Institute of Physics PAS, al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  2. Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

Despite of intensive search for the proper semiconductor base materials for spintronic devices working at room temperature no appropriate material based on ferromagnetic semiconductors has been found so far. We demonstrate that the phase segregated system with MnSb hexagonal inclusions inside the GaSb matrix, formed directly during the molecular beam epitaxial growth reveals the ferromagnetic properties at room temperature and is a good candidate for exploitation in spintronics. Furthermore, the MnSb inclusions with only one crystalline structure were identified in this GaMn:MnSb granular material. The SQUID magnetometry confirmed that this material exhibits ferromagnetic like behavior starting from helium up to room temperature. Moreover, the magnetic anisotropy was found which was present also at room temperature, and it was proved that by choosing a proper substrate it is possible to control the direction of easy axis of inclusions' magnetization moment between in-plane and out-of-plane; the latter is important in view of potential applications in spintronic devices.

OSTI ID:
21538229
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 7; Other Information: DOI: 10.1063/1.3562171; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English