Copper-related deep-level centers in irradiated p-type silicon

Journal Article · Tue Mar 15 00:00:00 EDT 2011 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PHYSREVB.83.125207· OSTI ID:21538197

Yarykin, Nikolai; Weber, Joerg ^[1]

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1. Institute of Microelectronics Technology RAS, 142432 Chernogolovka (Russian Federation)

Deep-level centers are investigated in the p-type Si on copper-contaminated samples which were also electron irradiated. Standard and Laplace-transform deep-level transient spectroscopy techniques were employed to characterize the samples. Several Cu-related centers are observed to form either as a result of the low-temperature Cu diffusion into the irradiated crystals or due to irradiation of the Cu-contaminated samples and subsequent annealing up to 400 deg. C. In all crystals, two Cu-related defects are found to be the most abundant; each of them possesses a pair of levels in the lower half of the gap. The Arrhenius signatures for one pair are measured to be practically identical to those for the donor and acceptor levels of substitutional copper Cu{sub s}, respectively, the levels of other defect being only barely different from the Cu{sub s} levels. Analysis of the introduction rates and depth profiles of the deep-level centers points to the vacancy-oxygen complex (VO, the A center) as the precursor of the most abundant Cu-related defects. It is inferred that Cu{sub s} is formed in irradiated silicon due to interaction with the VO centers via the rather stable intermediate CuVO complex.

• OSTI ID: 21538197
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 12; Other Information: DOI: 10.1103/PhysRevB.83.125207; (c) 2011 American Institute of Physics; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
A CENTERS
ANNEALING
COPPER ADDITIONS
COPPER COMPLEXES
CRYSTAL DEFECTS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DIFFUSION
ELECTRON BEAMS
ELECTRONS
INTERACTIONS
LAPLACE TRANSFORMATION
OXYGEN COMPLEXES
PHYSICAL RADIATION EFFECTS
P-TYPE CONDUCTORS
SILICON
TEMPERATURE RANGE 0400-1000 K
VACANCIES
ALLOYS
BEAMS
COLOR CENTERS
COMPLEXES
COPPER ALLOYS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HEAT TREATMENTS
INTEGRAL TRANSFORMATIONS
LEPTON BEAMS
LEPTONS
MATERIALS
PARTICLE BEAMS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SPECTROSCOPY
TEMPERATURE RANGE
TRANSFORMATIONS
TRANSITION ELEMENT ALLOYS
TRANSITION ELEMENT COMPLEXES