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Title: CF{sub 4} plasma treatment on nanostructure band engineered Gd{sub 2}O{sub 3}-nanocrystal nonvolatile memory

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3556761· OSTI ID:21538182
;  [1]
  1. 1Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan (China)

The effects of CF{sub 4} plasma treatment on Gd{sub 2}O{sub 3} nanocrystal (NC) memory were investigated. For material analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy analyses were performed to characterize the fluorine depth profile of the Gd{sub 2}O{sub 3}-NC film. In addition, an UV-visible spectrophotometer was used to obtain the Gd{sub 2}O{sub 3} bandgap and analyzed to suggest the modified structure of the energy band. Moreover, the electrical properties, including the memory window, program/erase speed, charge retention, and endurance characteristics were significantly improved depending on the CF{sub 4} plasma treatment conditions. This can be explained by the physical model based on the built-in electric field in the Gd{sub 2}O{sub 3} nanostructure. However, it was observed that too much CF{sub 4} plasma caused large surface roughness induced by the plasma damage, leading to characteristics degradation. It was concluded that with suitable CF{sub 4} plasma treatment, this Gd{sub 2}O{sub 3}-NC memory can be applied to future nonvolatile memory applications.

OSTI ID:
21538182
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 6; Other Information: DOI: 10.1063/1.3556761; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English