Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy

Journal Article · Tue Mar 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3553583· OSTI ID:21538146

Cavalcoli, Daniela; Rossi, Marco; Cavallini, Anna ^[1]

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1. Physics Department, University of Bologna, Viale C Berti Pichat 6/II, I-40127 Bologna (Italy)

Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied recently due to very promising photovoltaic and optoelectronics applications. The present paper aims to study electronic transitions in nc-Si:H grown by Low Energy Plasma Enhanced Chemical Vapor Deposition by Surface Photovoltage Spectroscopy. The study of several thin films grown at different conditions and the comparison with recently published computational studies allowed us to advance a hypothesis on the defect structure responsible for electronic transitions in nc-Si:H.

• OSTI ID: 21538146
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 5; Other Information: DOI: 10.1063/1.3553583; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
HYDROGEN
HYDROGENATION
HYPOTHESIS
INTERACTIONS
NANOSTRUCTURES
PHOTOVOLTAIC EFFECT
PLASMA
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SURFACES
THIN FILMS
CHEMICAL COATING
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRICAL PROPERTIES
ELEMENTS
EVALUATION
FILMS
MATERIALS
NONMETALS
PHOTOELECTRIC EFFECT
PHYSICAL PROPERTIES
SEMIMETALS
SURFACE COATING