Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
Abstract
InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.
- Authors:
-
- Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
- Office of Principal Scientific Advisor, Government of India, New Delhi 110011 (India)
- Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India)
- Publication Date:
- OSTI Identifier:
- 21538104
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 4; Other Information: DOI: 10.1063/1.3549685; (c) 2011 American Institute of Physics; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FIELD EMISSION; GALLIUM NITRIDES; INDIUM NITRIDES; INTERFACES; ISOTOPIC EXCHANGE; MOLECULAR BEAM EPITAXY; PHOSPHORUS COMPOUNDS; PLASMA; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THERMIONIC EMISSION; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE RANGE
Citation Formats
Roul, Basanta, Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Rajpalke, Mohana K, Bhat, Thirumaleshwara N, Krupanidhi, S B, Sinha, Neeraj, and Kalghatgi, A T. Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. United States: N. p., 2011.
Web. doi:10.1063/1.3549685.
Roul, Basanta, Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Rajpalke, Mohana K, Bhat, Thirumaleshwara N, Krupanidhi, S B, Sinha, Neeraj, & Kalghatgi, A T. Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes. United States. https://doi.org/10.1063/1.3549685
Roul, Basanta, Kumar, Mahesh, Central Research Laboratory, Bharat Electronics, Bangalore 560013, Rajpalke, Mohana K, Bhat, Thirumaleshwara N, Krupanidhi, S B, Sinha, Neeraj, and Kalghatgi, A T. 2011.
"Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes". United States. https://doi.org/10.1063/1.3549685.
@article{osti_21538104,
title = {Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes},
author = {Roul, Basanta and Kumar, Mahesh and Central Research Laboratory, Bharat Electronics, Bangalore 560013 and Rajpalke, Mohana K and Bhat, Thirumaleshwara N and Krupanidhi, S B and Sinha, Neeraj and Kalghatgi, A T},
abstractNote = {InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.},
doi = {10.1063/1.3549685},
url = {https://www.osti.gov/biblio/21538104},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 109,
place = {United States},
year = {Tue Feb 15 00:00:00 EST 2011},
month = {Tue Feb 15 00:00:00 EST 2011}
}