Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

Journal Article · Sat Jan 15 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3544065· OSTI ID:21538048

Ying, J; Zhang, X W; Yin, Z G; Tan, H R; Zhang, S G; Fan, Y M ^[1]

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1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Si-doped cubic boron nitride (c-BN) films with various Si concentrations were achieved by in situ cosputtering during ion beam assisted deposition. Effects of the Si concentration and rapid thermal annealing (RTA) conditions on the electrical transport properties of Si-doped c-BN thin films were investigated systematically. The results suggest that the optimum RTA condition is at the temperature of 1000 deg. C for 3 min. The resistance of Si-doped c-BN films gradually decreases as the Si concentration increases, indicating an electrical doping effect of the Si impurity. The temperature dependent electrical conductivity of the Si-doped c-BN films suggests that different conduction mechanisms are dominant over the different temperature ranges. Based on the Davis-Mott model, we propose that the extended-state conduction, band tail-state conduction and short-range hopping conduction are responsible for the respective temperature ranges. In addition, the reduction in activation energy of Si impurities is observed as the Si concentration increases.

• OSTI ID: 21538048
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 2; Other Information: DOI: 10.1063/1.3544065; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ANNEALING
BORON NITRIDES
CUBIC LATTICES
DOPED MATERIALS
DOSE RATES
ELECTRIC CONDUCTIVITY
IMPURITIES
ION BEAMS
SEMICONDUCTOR MATERIALS
SILICON
SILICON ADDITIONS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
ALLOYS
BEAMS
BORON COMPOUNDS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
FILMS
HEAT TREATMENTS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON ALLOYS