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Title: Polarity inversion of N-face GaN using an aluminum oxide interlayer

Polarity inversion of N-face GaN using an aluminum oxide interlayer The polarity of GaN grown by plasma-assisted molecular beam epitaxy was inverted from N-face to Ga-face by inserting a composite AlN/aluminum oxide (AlO{sub x}) interlayer structure at the inversion interface. The change in polarity was verified in situ by reflection high energy electron diffraction via intensity transients and postgrowth surface reconstructions, and ex situ by convergent beam electron diffraction and etch studies in an aqueous potassium hydroxide solution. The inverted materials showed smooth surfaces and good electrical properties. AlGaN/GaN high electron mobility transistors fabricated on the inverted epilayers showed good dc and high frequency performance. A current-gain cutoff frequency (f{sub T}) of 21 GHz and maximum oscillation frequency (f{sub max}) of 61 GHz were measured in devices with a gate length of 0.7 {mu}m. These data compare favorably to those of Ga-face AlGaN/GaN devices with a similar structure grown on Si-face SiC substrates.
Authors: ; ; ;
Publication Date:
OSTI Identifier:21537990
Resource Type:Journal Article
Resource Relation:Journal Name: Journal of Applied Physics; Journal Volume: 108; Journal Issue: 12; Other Information: DOI: 10.1063/1.3524473; (c) 2010 American Institute of Physics
Country of Publication:United States
Language:English
Subject: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; COMPARATIVE EVALUATIONS; ELECTRICAL PROPERTIES; ELECTRON BEAMS; ELECTRON DIFFRACTION; ELECTRON MOBILITY; GALLIUM NITRIDES; GHZ RANGE; INTERFACES; MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SUBSTRATES; SURFACES ALUMINIUM COMPOUNDS; BEAMS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; EVALUATION; FREQUENCY RANGE; GALLIUM COMPOUNDS; LEPTON BEAMS; MATERIALS; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SILICON COMPOUNDS