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Title: Microstructural and dielectric properties of Ba{sub 0.6}Sr{sub 0.4}Ti{sub 1-x}Zr{sub x}O{sub 3} based combinatorial thin film capacitors library

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3514153· OSTI ID:21537967
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  1. Laboratoire d'Electrodynamique des Materiaux Avances (LEMA), UMR 6157 CNRS/CEA, Universite Francois Rabelais, Parc de Grandmont, 37200 Tours (France)

Epitaxial growth of Ba{sub 0.6}Sr{sub 0.4}Ti{sub 1-x}Zr{sub x}O{sub 3} (0{<=}x{<=}0.3) composition spread thin film library on SrRuO{sub 3}/SrTiO{sub 3} layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure, and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations in the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.

OSTI ID:
21537967
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3514153; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English