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Title: Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3512965· OSTI ID:21537962
; ; ; ;  [1]
  1. Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.

OSTI ID:
21537962
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3512965; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English