Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)
We report the observation of enhanced oxidation on silicon and porous silicon samples exposed in air ambient to high-dose-rate 10 keV x-ray radiation at room temperature. The evolution of the radiation-induced oxide growth is monitored by ellipsometry and interferometric reflectance spectroscopy. Fourier transform infrared (FTIR) spectroscopy shows the emergence of Si-O-Si stretching modes and corresponding suppression of SiH{sub x} and Si-Si modes in the porous silicon samples. The radiation response depends strongly on initial native oxide thickness and Si-H surface species. The enhanced oxidation mechanism is attributed to photoinduced oxidation processes wherein energetic photons are used to dissociate molecular oxygen and promote the formation of more reactive oxygen species.
- OSTI ID:
- 21537962
- Journal Information:
- Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3512965; (c) 2010 American Institute of Physics; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANDESITES
FOURIER TRANSFORM SPECTROMETERS
INFRARED SPECTRA
INTERFEROMETRY
IRRADIATION
KEV RANGE 01-10
MULTI-ELEMENT ANALYSIS
OXIDATION
PHOTOLYSIS
PHOTONS
POROUS MATERIALS
SEMICONDUCTOR MATERIALS
SILICON
SPECTROSCOPY
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
X RADIATION
BOSONS
CHEMICAL ANALYSIS
CHEMICAL REACTIONS
DECOMPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
ENERGY RANGE
FILMS
IGNEOUS ROCKS
IONIZING RADIATIONS
KEV RANGE
MASSLESS PARTICLES
MATERIALS
MEASURING INSTRUMENTS
PHOTOCHEMICAL REACTIONS
RADIATIONS
ROCKS
SEMIMETALS
SPECTRA
SPECTROMETERS
TEMPERATURE RANGE
VOLCANIC ROCKS