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Title: InAlN/GaN Bragg reflectors grown by plasma-assisted molecular beam epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3517138· OSTI ID:21537951
; ;  [1]; ;  [2];  [2]
  1. ISOM, Universidad Politecnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain)
  2. Departament d'Electronica, LENS-MIND-IN2UB, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

We report on molecular beam epitaxy growth and characterization of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs), with peak reflectivity centered around 400 nm. Thanks to the well tuned ternary alloy composition, crack-free surfaces have been obtained, as confirmed by both optical and transmission electron microscopy (TEM). Their good periodicity and well-defined interfaces have been confirmed by both x-ray diffraction and TEM measurements. Peak reflectivity values as high as 60% with stop bands of 30 nm have been demonstrated. Optical measurements revealed that discrepancy between the obtained (60%) and the theoretically expected ({approx}75%) reflectivity is a consequence of significant residual absorption ({approx}35%). TEM measurements revealed the coexistence of zinc-blende and wurtzite phases, as well as planar defects, mainly in GaN. These defects are suggested as the potential source of the undesired absorption and/or scattering effects that lowered the DBRs' peak reflectivity.

OSTI ID:
21537951
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3517138; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English