Preparation of III-V semiconductor nanocrystals
Patent
·
OSTI ID:215237
Nanometer-scale crystals of III-V semiconductors are disclosed. They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline. 4 figs.
- Research Organization:
- Univ. of California (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC03-76SF00098
- Assignee:
- Univ. of California, Oakland, CA (United States)
- Patent Number(s):
- US 5,505,928/A/
- Application Number:
- PAN: 8-231,345
- OSTI ID:
- 215237
- Resource Relation:
- Other Information: PBD: 9 Apr 1996
- Country of Publication:
- United States
- Language:
- English
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