Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition
- BK21 Physics Research Division, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 deg. C down to 450 deg. C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 {Omega}/sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.
- OSTI ID:
- 21518508
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 26; Other Information: DOI: 10.1063/1.3605560; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single orientation graphene synthesized on iridium thin films grown by molecular beam epitaxy
Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices
Related Subjects
CARBON
CHEMICAL VAPOR DEPOSITION
ELECTRIC CONDUCTIVITY
FOILS
HONEYCOMB STRUCTURES
HYDROGEN
LAYERS
METHANE
MICROWAVE RADIATION
MIXING
MIXING RATIO
NICKEL
OPACITY
OPTICAL MICROSCOPY
PLASMA
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SYNTHESIS
ALKANES
CHEMICAL COATING
DEPOSITION
DIMENSIONLESS NUMBERS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
HYDROCARBONS
MATERIALS
MECHANICAL STRUCTURES
METALS
MICROSCOPY
NONMETALS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SPECTRA
SURFACE COATING
TRANSITION ELEMENTS